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P6010DTG Datasheet - UNIKC

P6010DTG P-Channel MOSFET

P6010DTG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 60mΩ @VGS = -10V ID -27A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -27 -17 -100 Avalanche Current IAS -54 Avalanche Energy L = 0.1mH EAS 143 Power Dissipation TC = 25 °C TC = 100 °C PD 83.

P6010DTG Datasheet (490.83 KB)