P6015CDG Datasheet - UNIKC

P6015CDG N-Channel Transistor

P6015CDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 20A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±12 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 20 15 60 Avalanche Current IAS 20 Avalanche Energy Repetitive Avalanche Energy2 L = 0.47mH L = 0.47mH EAS EAR 94 35 Power Dissipation TC = 25 °C TC = 100 °C .

P6015CDG-UNIKC.pdf