P6015AV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 150V 60mΩ @VGS = 10V ID 5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 5 4 22 Avalanche Current IAS 22 Avalanche Energy L = 0.1mH EAS 25 Power Dissipation TA = 25 °C TA = 70 °C PD 2.5 1.6 Junction.