PA610DD Datasheet - UNIKC

PA610DD P-Channel MOSFET

PA610DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -100V 200mΩ @VGS = -10V ID -10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -100 Gate-Source Voltage VGS ±30 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM -10 -8 -28 Avalanche Current IAS -12 Avalanche Energy L = 1mH EAS 72 Power Dissipation TC = 25 °C TC = 100 °C PD 36 15 .

PA610DD Datasheet (516.63 KB)