PB6C4JU Datasheet - UNIKC

PB6C4JU Dual N-Channel Enhancement Mode MOSFET

PB6C4JU Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 19.5mΩ @VGS = 4.5V 7A TDFN 2X3-6 1,2:S1 3:G1 4:G2 5,6:S2 7:D1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID 7 6 IDM 25 Avalanche Current IAS 13 Avalanche Energy3 EAS 8.5 Power Dissipation TA= 25 .

PB6C4JU Datasheet (770.64 KB)