PB600BA - MOSFET
PB600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 9A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 9 7.2 27 Avalanche Current IAS 12.6 Avalanche Energy L = 0.1 mH EAS 7.9 Power Dissipation TA= 25 °C TA= 70°C PD 1.7 1.1 Operat
