PB6C4JY Datasheet - UNIKC

PB6C4JY MOSFET

PB6C4JY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 20V 19.5mΩ @VGS = 4.5V ID 7.6A PDFN 2X5 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 7.6 6 25 Avalanche Current IAS 13 Avalanche Energy L = 0.1mH EAS 8.9 Power Dissipation TA = 25 °C TA = 70 °C PD 1.9 1.2 Operating Junction & Storage.

PB6C4JY Datasheet (810.54 KB)