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PB606BA Datasheet - UNIKC

PB606BA MOSFET

PB606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 16mΩ @VGS = 10V ID 7.8A PDFN 2X2S 100%RG TEST 100%UIL TEST ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 7.8 6.2 21 Avalanche Current IAS 12.8 Avalanche Energy L = 0.1 mH EAS 8.2 Power Dissipation TA= 25 °C .

PB606BA Datasheet (419.65 KB)