PD1203BEA Datasheet - UNIKC

PD1203BEA MOSFET

PD1203BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 11A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 11 9 44 Avalanche Current IAS 24 Avalanche Energy L = 0.1mH EAS 28 Power Dissipation TA = 25 °C TA = 70 °C PD 2.3 1.5 Opera.

PD1203BEA Datasheet (464.15 KB)