PD1503YVS Datasheet - UNIKC

PD1503YVS MOSFET

PD1503YVS Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) Q2 30V 15.8mΩ @VGS = 10V Q1 30V 21.0mΩ @VGS = 10V ID 9A 8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current2 Pulsed Drain Current1 , 2 TA = 25 °C TA = 70 °C ID 9 7 8 6 IDM 35 30 Avalanche Current IAS 29 21 Avalanche Energy L = 0.1mH EAS 43 2.

PD1503YVS-UNIKC.pdf