PD1503YVS-A Datasheet - UNIKC

PD1503YVS-A MOSFET

PD1503YVS-A Dual N- Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 15.5mΩ @VGS = 10V 9A Q1 30V 18mΩ @VGS = 10V 8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current TA = 25 °C TA = 70 °C Avalanche Energy L =0.1mH Power Dissipation TA = 25 °C TA = 70 °C Junction & Storage Temperature Range.

PD1503YVS-A Datasheet (717.78 KB)