PE532DY Datasheet - UNIKC

PE532DY MOSFET

PE532DY Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 19mΩ @VGS = 10V ID3 21A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 21 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 13 7.5 Pulsed Drain Current1 TA= 70 °C IDM 6 25 Avalanche Current IAS 17 Avalanche Energy L =0.1mH EAS 15 TC = 25 °C 14 Power.

PE532DY Datasheet (725.07 KB)