PE548EA Datasheet - UNIKC

PE548EA MOSFET

PE548EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 4.4mΩ @VGS = 10V ID3 58A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 58 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 37 16 Pulsed Drain Current1 TA= 70 °C IDM 13 160 Avalanche Current IAS 40 Avalanche Energy L =0.1mH EAS 80 TC = 25 °C 25 Power Di.

PE548EA Datasheet (437.96 KB)