PV555BA Datasheet - UNIKC

PV555BA P-Channel MOSFET

PV555BA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 28mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM -6 -4.7 -24 Avalanche Current IAS -19.3 Avalanche Energy L=0.1mH EAS 18.6 Power Dissipation TA = 25 °C TA = 70 °C PD 1.7 1.1.

PV555BA Datasheet (767.65 KB)