18N20 Datasheet, Mosfet, UTC

18N20 Features

• Mosfet
• RDS(ON) < 0.20Ω @ VGS=10V, ID=9.0A
• Fast switching capability
• Avalanche energy specified
• Improved dv/dt capability, high ruggedness
• SYMB

PDF File Details

Part number:

18N20

Manufacturer:

UTC

File Size:

242.37kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switchin

18N20 Application

• Applications The 18N20 suitable for resonant and PWM converter topologies.
• FEATURES
• RDS(ON) < 0.20Ω @ VGS=10V, ID=9.0A

TAGS

18N20

UTC

📁 Related Datasheet

18N20 - N-Channel Mosfet Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·1.

18N20GH - AP18N20GH (Advanced Power Electronics)
Advanced Power Electronics Corp. AP18N20GH/J-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-res.

18N20GS - N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
Advanced Power Electronics Corp. AP18N20GS/P-HF Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requir.

18N25 - 18A 250V N-CHANNEL POWER MOSFET (UNISONIC TECHNOLOGIES)
UNISONIC TECHNOLOGIES CO., LTD 18N25 18A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N25 is a N-channel enhancement mode power MOSFET using .

18N25-HC - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 18N25-HC 18A, 250V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N25-HC is a N-channel enhancement MOSFET using UTC’s .

18N10 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-.

18N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate.

18N120BN - HGTG18N120BN (Fairchild Semiconductor)
HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new .

18N40 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 18N40 400V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 18N40 is a 400V N-channel Power MOSFET, providin.

18N50 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra.