18N55M5 Datasheet, Mosfet, STMicroelectronics

18N55M5 Features

• Mosfet TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD18N55M5 600 V 192 mΩ 16 A
• Extremely low RDS(on)
• Low gate charge and input capacitanc

PDF File Details

Part number:

18N55M5

Manufacturer:

STMicroelectronics ↗

File Size:

862.76kb

Download:

📄 Datasheet

Description:

N-channel power mosfet. S(3) AM01475v1_noZen This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combin

18N55M5 Application

• Applications G(1)
• Switching applications Description S(3) AM01475v1_noZen This device is an N-channel Power MOSFET based on the MDme

TAGS

18N55M5

STMicroelectronics

📁 Related Datasheet

18N50 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Dra.

18N50 - N-CHANNEL MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50 is a N-channel enhancement mode pow.

18N50 - N-Channel MOSFET (ON Semiconductor)
FDP18N50 / FDPF18N50 / FDPF18N50T — N-Channel UniFETTM MOSFET FDP18N50 / FDPF18N50 / FDPF18N50T N-Channel UniFETTM MOSFET 500 V, 18 A, 265 mΩ Feat.

18N50-C - N-CHANNEL MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 18N50-C 18A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 18N50-C provide excellent RDS(ON), low ga.

18N50-MH - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 18N50-MH Preliminary 18A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 18N50-MH is a high voltage power MOSFET.

18N10 - N-Channel Mosfet Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-.

18N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GOFORD 18N10 N-Channel Enhancement Mode Power MOSFET Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate.

18N120BN - HGTG18N120BN (Fairchild Semiconductor)
HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new .

18N20 - N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 18N20 Preliminary 18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET fiel.

18N20 - N-Channel Mosfet Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 18A@ TC=25℃ ·Static drain-source on-resistance: RDS(on) ≤0.092Ω ·Fast Switching Speed ·1.