18NM60N Datasheet - STMicroelectronics

18NM60N N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most.

18NM60N Features

* Order codes VDSS (@Tjmax) RDS(on) max. ID PTOT STB18NM60N STF18NM60N STP18NM60N STW18NM60N 650 V 110 W 30 W < 0.285 Ω 13 A 110

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance TAB 3 1 D²PAK TAB 3 2 1 TO-220 3 2 1 TO-220FP 3 2 1 TO-247

18NM60N-STMicroelectronics.pdf