1N60 Datasheet - UTC

1N60 N-CHANNEL MOSFET

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM .

1N60 Features

* RDS(ON) =9.3Ω@VGS = 10V.

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (CRSS = typical 3.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness 1 TO-220F

* Pb-free plating product number

1N60 Datasheet (169.97 KB)

1N60 Datasheet Preview — Preview of 1N60 PDF

Datasheet Details

Part number:

1N60

Manufacturer:

UTC

File Size:

169.97 KB

Description:

N-channel mosfet.

📁 Related Datasheet

1N60 Schottky Barrier Rectifier (MCC)

1N60 SMALL SIGNAL SCHOTTKY DIODE (KD)

1N60 Germanium Glass Diode (TAITRON)

1N60-KW N-CHANNEL POWER MOSFET (Unisonic Technologies)

1N6000 Axial-Leaded 500 mW Zener Diodes (Microsemi)

1N6000 500mW Zener Diode (MCC)

1N6000 500mW ZENER DIODES (Digitron Semiconductors)

1N6000A ZENER DIODES (EIC)

TAGS

1N60 N-CHANNEL MOSFET UTC

1N60 Distributor