1N60 Datasheet (UTC) - N-CHANNEL MOSFET

1N60, N-CHANNEL MOSFET

The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

This power MOSFET is usually used at high speed switching applications in power supplies, PWM

1N60 Features

* RDS(ON) =9.3Ω@VGS = 10V.

* Ultra Low gate charge (typical 5.0nC)

* Low reverse transfer capacitance (CRSS = typical 3.0 pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness 1 TO-220F

* Pb-free plating product number