TIP112 Datasheet, Transistor, UTC

TIP112 Features

• Transistor
• High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min)
• Low Collector-Emitter Saturation Voltage
• Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω) B C E

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Part number:

TIP112

Manufacturer:

UTC

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128.62kb

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📄 Datasheet

Description:

Npn epitaxial silicon darlington transistor.

TAGS

TIP112

UTC

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