TIP112 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

UTC

Description

UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR .

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Datasheet Specifications

Part number: TIP112
Manufacturer: UTC
File Size: 128.62 KB
Datasheet: TIP112_UTC.pdf
Description: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

Features

* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min)
* Low Collector-Emitter Saturation Voltage
* Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω) B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base V

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TIP112 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR UTC

UTC TIP112-like datasheet