Part number:
TIP112
Manufacturer:
UTC
File Size:
128.62 KB
Description:
Npn epitaxial silicon darlington transistor.
* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min)
* Low Collector-Emitter Saturation Voltage
* Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω) B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base V
TIP112
UTC
128.62 KB
Npn epitaxial silicon darlington transistor.
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