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TIP112 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

TIP112 Description

UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR .

TIP112 Features

* High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A (Min)
* Low Collector-Emitter Saturation Voltage
* Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω) B C E TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base V

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Datasheet Details

Part number
TIP112
Manufacturer
UTC
File Size
128.62 KB
Datasheet
TIP112_UTC.pdf
Description
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR

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NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR UTC
UTC TIP112-like datasheet