USG04R022M - 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET

UTC

USG04R022M Datasheet Preview — Preview of USG04R022M PDF

Datasheet Details

Part number	USG04R022M
Manufacturer	UTC
File Size	238.49 KB
Description	40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET
Datasheet	USG04R022M-UTC.pdf

USG04R022M Product details

Description

The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A.
RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A.
Extremely low on-resistance RDS(ON).
Excellent Low Ciss.
SYMBOL.

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Published: May 2, 2024 |