USG04R022M 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD USG04R022M Preliminary 80A, 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET POWER MOSFET * .
The UTC USG04R022M is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cel.

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Datasheet Specifications

Part number: USG04R022M
Manufacturer: UTC
File Size: 238.49 KB
Datasheet: USG04R022M-UTC.pdf
Description: 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET

Features

* RDS(ON) ≤ 2.2 mΩ @ VGS=10V, ID=20A
* RDS(ON) ≤ 3.2 mΩ @ VGS=4.5V, ID=20A
* Extremely low on-resistance RDS(ON)
* Excellent Low Ciss
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package USG04R022ML-T8A-R USG04R022MG-T8A-R TOLL-8A Note: Pin As

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USG04R022M 40V N-CHANNEL SGT ENHANCEMENT POWER MOSFET UTC

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