USG120N10 Datasheet (UTC) - N-CHANNEL POWER MOSFET

USG120N10, N-CHANNEL POWER MOSFET

The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

The UTC USG120N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency

USG120N10 Features

* RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A

* High Switching Speed

* SYMBOL 2.Drain 1 TO-220 1 TO-263 1.Gate 3.Source

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free USG120N10L-TA3-T USG120N10G-TA3-T USG120N10L-TQ2-T USG120N10G-TQ