USG120N10

N-CHANNEL POWER MOSFET

UTC

USG120N10 Features

* RDS(ON) ≤ 4.5 mΩ @ VGS=10V, ID=20A RDS(ON) ≤ 6.5 mΩ @ VGS=6.0V, ID=20A

* High Switching Speed

* SYMBOL 2.Drain 1 TO-220 1 TO-263 1.Gate 3.Source

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free USG120N10L-TA3-T USG120N10G-TA3-T USG120N10L-TQ2-T USG120N10G-TQ

USG120N10 General Description

The UTC USG120N10 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG120N10 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency.

USG120N10 Datasheet (169.09 KB)

USG120N10 Datasheet Preview — Preview of USG120N10 PDF

Datasheet Details

Part number:

USG120N10

Manufacturer:

UTC

File Size:

169.09 KB

Description:

N-channel power mosfet.

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USG120N10 N-CHANNEL POWER MOSFET UTC

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USG120N10 Features

USG120N10 General Description

Datasheet Details

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Description:

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