USG170N03 - N-CHANNEL MOSFET

UTC

USG170N03 Datasheet Preview — Preview of USG170N03 PDF

Datasheet Details

Part number	USG170N03
Manufacturer	UTC
File Size	259.80 KB
Description	N-CHANNEL MOSFET
Datasheet	USG170N03-UTC.pdf

USG170N03 Product details

Description

The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology.

Features

RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A.
Optimized for high speed switching, Logic level.
Enhanced Body diode dv/dt capability.
Enhanced Avalanche Ruggednessy.
SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3).

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Published: Dec 21, 2020 |