USG170N03

N-CHANNEL MOSFET

UTC

USG170N03 Features

* RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A

* Optimized for high speed switching, Logic level

* Enhanced Body diode dv/dt capability

* Enhanced Avalanche Ruggednessy

* SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3)

USG170N03 General Description

The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG170N03 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency.

USG170N03 Datasheet (259.80 KB)

USG170N03 Datasheet Preview — Preview of USG170N03 PDF

Datasheet Details

Part number:

USG170N03

Manufacturer:

UTC

File Size:

259.80 KB

Description:

N-channel mosfet.

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USG170N03 N-CHANNEL MOSFET UTC

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USG170N03 Features

USG170N03 General Description

Datasheet Details

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Description:

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