USG170N03 N-CHANNEL MOSFET

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD USG170N03 Preliminary 85A, 30V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET * .
The UTC USG170N03 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell.

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Datasheet Specifications

Part number: USG170N03
Manufacturer: UTC
File Size: 259.80 KB
Datasheet: USG170N03-UTC.pdf
Description: N-CHANNEL MOSFET

Features

* RDS(ON) ≤ 2.64 mΩ @ VGS=10V, ID=30A RDS(ON) ≤ 4.1 mΩ @ VGS=4.5V, ID=25A
* Optimized for high speed switching, Logic level
* Enhanced Body diode dv/dt capability
* Enhanced Avalanche Ruggednessy
* SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3)

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