USG70N11

N-CHANNEL MOSFET

UTC

USG70N11 Features

* RDS(ON) ≤ 12.5 mΩ @ VGS=10V, ID=15A RDS(ON) ≤ 19 mΩ @ VGS=4.5V, ID=8.0A

* Optimized for high speed switching, Logic level

* Enhanced Body diode dv/dt capability

* Enhanced Avalanche Ruggednessy

* SYMBOL Drain (5, 6, 7, 8) POWER MOSFET 1 DFN5060-8 Gate (4) Source (1, 2, 3)

USG70N11 General Description

The UTC USG70N11 is a N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with low RDS(ON) characteristic by high cell density trench technology. The UTC USG70N11 is suitable for high efficiency synchronous rectification in SMPS, UPS, hard switched and high frequency c.

USG70N11 Datasheet (258.49 KB)

USG70N11 Datasheet Preview — Preview of USG70N11 PDF

Datasheet Details

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USG70N11

Manufacturer:

UTC

File Size:

258.49 KB

Description:

N-channel mosfet.

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USG70N11 N-CHANNEL MOSFET UTC

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USG70N11 Features

USG70N11 General Description

Datasheet Details

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