UTG4N65-S Datasheet, Igbt, UTC

UTG4N65-S Features

• Igbt
• High switching speed
• High avalanche ruggedness
• Low saturation voltage: VCE(SAT).Typ.=1.44V @ IC=4.0A, VGE=15V (TC =25°C)
• SYMBOL
• ORDERI

PDF File Details

Part number:

UTG4N65-S

Manufacturer:

UTC

File Size:

224.10kb

Download:

📄 Datasheet

Description:

650v trench gate field-stop igbt. The UTC UTG4N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers w

UTG4N65-S Application

• Applications
• FEATURES
• High switching speed
• High avalanche ruggedness
• Low saturation voltage: VCE(SAT).Typ.=

TAGS

UTG4N65-S

UTC

📁 Related Datasheet

UTG40N120FQ-S - 1200V TRENCH GATE FIELD-STOP IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ.

UTG40N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UTG40N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N65-S is a.

UTG48T01 - 100/1000 BASE-T DUAL PORT MAGNETICS MODULE (UTG)
100/1000 BASE-T DUAL PORT MAGNETICS MODULE P/N: UTG48T01 DATA SHEET Page : 1/1 Feature Compliant with IEEE 802.3ab&802.3af standard. Comply with R.

UTG10N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT.

UTG20N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UTG20N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG20N65-S is a.

UTG24P05 - 100/1000 BASE-T SINGLE PORT MAGNETICS MODULE (UTG)
100/1000 BASE-T SINGLE PORT MAGNETICS MODULE P/N: UTG24P05 DATA SHEET Page : 1/1 Feature Compliant with IEEE 802.3ab standard. Comply with RoHS re.

UTG25N120 - 1200V NPT IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UTG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION The UTC UTG25N120 is a.

UTG25N120-G2 - 1200V TRENCH GATE FIELD-STOP IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UTG25N120-G2 Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG25N120-G2.

UTG25N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UTG25N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT.

UTG28N65-S - 650V TRENCH GATE FIELD-STOP IGBT (UTC)
UNISONIC TECHNOLOGIES CO., LTD UTG28N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT 1  DESCRIPTION The UTC.