UTG4N65-S Datasheet - UTC

UTG4N65-S 650V TRENCH GATE FIELD-STOP IGBT

The UTC UTG4N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG4N65-S is suitable for the resonant or soft switching applications. * FEAT.

UTG4N65-S Features

* High switching speed

* High avalanche ruggedness

* Low saturation voltage: VCE(SAT).Typ.=1.44V @ IC=4.0A, VGE=15V (TC =25°C)

* SYMBOL

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG4N65L-TN3-R UTG4N65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Sou

UTG4N65-S-UTC.pdf