UTG4N65-S 650V TRENCH GATE FIELD-STOP IGBT

UTC

Description

UNISONIC TECHNOLOGIES CO., LTD UTG4N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT * .
The UTC UTG4N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor.

📥 Download Datasheet

UTG4N65-S Datasheet Preview — Preview of UTG4N65-S PDF

Datasheet Specifications

Part number: UTG4N65-S
Manufacturer: UTC
File Size: 224.10 KB
Datasheet: UTG4N65-S-UTC.pdf
Description: 650V TRENCH GATE FIELD-STOP IGBT

Features

* High switching speed
* High avalanche ruggedness
* Low saturation voltage: VCE(SAT). Typ. =1.44V @ IC=4.0A, VGE=15V (TC =25°C)
* SYMBOL
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTG4N65L-TN3-R UTG4N65G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Sou

UTG4N65-S Distributors

📁 Related Datasheet

UTG48T01 UTG24P05

📌 All Tags

UTG4N65-S 650V TRENCH GATE FIELD-STOP IGBT UTC

UTC UTG4N65-S-like datasheet