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UTG60N60 - 600V TRENCH GATE FIELD-STOP IGBT

General Description

The UTC UTG60N60 is an Trench Field-Stop Insulated Gate Bipolar Transistor.

it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc.

The UTC UTG60N60 is suitable for the resonant or soft switching applications.

FEATUR

Key Features

  • High switching speed.
  • High avalanche ruggedness.
  • Low saturation voltage: VCE(SAT). Typ. =1.5V @ IC=60A, VGE=15V (TC =25°C).
  • SYMBOL.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTG60N60 Preliminary Insulated Gate Bipolar Transistor 600V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG60N60 is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG60N60 is suitable for the resonant or soft switching applications.  FEATURES * High switching speed * High avalanche ruggedness * Low saturation voltage: VCE(SAT).Typ.=1.