13003BDG Datasheet - Unisonic Technologies

13003BDG - NPN SILICON TRANSISTOR

The UTC 13003BDG is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base breakdown voltage, low reverse leakage current and high reliability, etc. The UTC 13003BDG is suitable for electronic ballast power switch circuit and the compact .

13003BDG Features

* High collector-base breakdown voltage

* Low reverse leakage current

* High reliability

* EQUIVALENT CIRCUIT C B E

* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 13003BDGL-TM3-T 13003BDGP-TM3-T 13003BDGL-T60-F-K 13003BDGP-T60-F-K 13003BDGL-T92-F-

13003BDG-UnisonicTechnologies.pdf