Part number:
2N7002ZDW
Manufacturer:
Unisonic Technologies
File Size:
509.98 KB
Description:
Dual n-channel power mosfet.
2N7002ZDW Datasheet (509.98 KB)
* Low Reverse Transfer Capacitance
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness Power MOSFET 54 6 1 23 SOT-26 654 1 23 SOT-363
* SYMBOL (6) D1 (3) D2 (2) G1 (5) G2 (1) S1 (4) S2
* ORDERING I
2N7002ZDW Datasheet (509.98 KB)
2N7002ZDW
Unisonic Technologies
509.98 KB
Dual n-channel power mosfet.
📁 Related Datasheet
2N7002Z - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2N7002Z
300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 2N7002Z uses advanced technology to pr.
2N7002ZT - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N7002ZT
300mA, 60V N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UTC 2N7002ZT uses advanced technology to .
2N7002 - N-channel FET
(Fairchild Semiconductor)
2N7000 / 2N7002 / NDS7002A — N-Channel Enhancement Mode Field Effect Transistor
August 2016
2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Fi.
2N7002 - N-Channel Power Mosfet
(GME)
Production specification
N-Channel Enhancement Mode Field Effect Transistor 2N7002
FEATURES
High Density Cell Design For Low
Pb
RDS(ON).
Lead-.
2N7002 - 300mA N-channel MOSFET
(nexperia)
2N7002
60 V, 300 mA N-channel Trench MOSFET
Rev. 7 — 8 September 2011
Product data sheet
1. Product profile
1.1 General description
N-channel enhan.
2N7002 - N-Channel MOSFET
(MCC)
Features
• Advanced Trench Process Technology • Low Threshold Voltage • Fast Switching Speed • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Se.
2N7002 - N-channel MOSFET
(Microchip)
2N7002
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L.
2N7002 - N-Channel Enhancement Mode Power MOSFET
(Rectron)
2N7002
N-Channel Enhancement Mode Power MOSFET
General Features
VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating HBM 230.
