Part number:
2N70Z
Manufacturer:
Unisonic Technologies
File Size:
256.67 KB
Description:
N-channel power mosfet.
* RDS(ON) = 6.3Ω@VGS = 10V
* Ultra Low gate charge (typical 8.1nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
* SYMBOL
* ORDERING INFORMATION
2N70Z
Unisonic Technologies
256.67 KB
N-channel power mosfet.
📁 Related Datasheet
2N70 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2N70
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC 2N70 is a high voltage MOSFET design.
2N70-CA - N-CHANNEL MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N70-CA
2A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70-CA is a high voltage MOSFET designed to have better .
2N70-CB - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N70-CB
Preliminary
2A, 700V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70-CB is a high voltage MOSFET designed.
2N70-HC - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2N70-HC
Preliminary
2A, 700V N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
The UTC 2N70-HC is a high voltage p.
2N70-M - N-CHANNEL POWER MOSFET
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2N70-M
Preliminary
2 Amps, 700 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N70-M is a high voltage MOSFET d.
2N700 - PNP Transistor
(Motorola)
2N700,A (GERMANIUM)
CASE 21
(TO-17)
PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier ap.
2N7000 - N-Channel DMOS FET
(Microchip)
2N7000
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L.
2N7000 - TMOS FET Transistor
(Motorola Inc)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N7000/D
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN 2 GATE 1 SOURCE
2N7000
M.
