Datasheet4U Logo Datasheet4U.com

UP9971 - N-CHANNEL POWER MOSFET

Datasheet Summary

Description

The UTC UP9971 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages.

This device is suitable for being used as a load switch or in PWM applications.

Features

  • RDS(ON).

📥 Download Datasheet

Datasheet preview – UP9971

Datasheet Details

Part number UP9971
Manufacturer Unisonic Technologies
File Size 241.50 KB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet UP9971 Datasheet
Additional preview pages of the UP9971 datasheet.

📁 Similar Datasheet

  • uP9301 - 5V/12V Synchronous-Rectified Buck Controller (uPI Semiconductor)
  • uP9303 - 5V/12V Synchronous-Rectified Buck Controller (uPI Semiconductor)
  • uP9505U - Dual Output 4+2-Phase PWM Controller (uPI Semiconductor)
  • uP9508Q - 3/2/1+2/1-Phase PWM Controller (uPI Semiconductor)
  • uP9509 - 3/2/1-Phase Synchronous-Rectified Buck Controller (uPI Semiconductor)
  • uP9509S - 3/2/1-Phase Synchronous-Rectified Buck Controller (uPI Semiconductor)
  • uP9510 - 3/2/1-Phase Synchronous-Rectified Buck Controller (uPI Semiconductor)
  • uP9511 - 8/7/6/5/4/3/2/1-Phase Synchronous-Rectified Buck Controller (uPI Semiconductor)
  • uP9511R - 8/7/6/5/4/3/2/1-Phase Synchronous-Rectified Buck Controller (uPI Semiconductor)
  • uP9512 - 8/7/6/5/4/3/2/1-Phase Synchronous-Rectified Buck Controller (uPI Semiconductor)
Other Datasheets by Unisonic Technologies
  • UP9972 - N-CHANNEL POWER MOSFET
  • UP9T15G - N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
UNISONIC TECHNOLOGIES CO., LTD UP9971 5A, 60V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UP9971 uses UTC’s advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for being used as a load switch or in PWM applications.  FEATURES * RDS(ON)<60 mΩ @ VGS=10V, ID=5A * RDS(ON)<72 mΩ @ VGS=4.5V, ID=2.5A * Ultra low gate charge ( typical 32.5 nC ) * Low reverse transfer Capacitance ( CRSS = typical 109 pF ) * Fast switching capability * Avalanche energy Specified * Improved dv/dt capability, high ruggedness  SYMBOL (7) (8) 1.Drain (5) (6) 2.Drain Power MOSFET DIP-8 SOP-8 (2) 1.Gate (4) 2.Gate (1) 1.Source (3) 2.
Published: |