Datasheet4U Logo Datasheet4U.com

25N06 N-CHANNEL POWER MOSFET

25N06 Description

UNISONIC TECHNOLOGIES CO., LTD 25N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR * .
The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on.

25N06 Features

* Low Gate Charge
* RDS(on) = 0.048 Ω (TYP. )
* Avalanche Rugged Technology
* 100% Avalanche Tested
* Repetitive Avalanche at 100°C
* High Current Capability
* Operating Temperature: 175°C

📥 Download Datasheet

Preview of 25N06 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
25N06
Manufacturer
Unisonic Technologies
File Size
200.57 KB
Datasheet
25N06_UnisonicTechnologies.pdf
Description
N-CHANNEL POWER MOSFET

📁 Related Datasheet

  • 25N01GVSFIG - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
  • 25N01GVSFIT - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
  • 25N01GVTBIG - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
  • 25N01GVTBIT - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
  • 25N01GVTCIG - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
  • 25N01GVTCIT - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
  • 25N01GVZEIG - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)
  • 25N01GVZEIT - 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY (Winbond)

📌 All Tags

Unisonic Technologies 25N06-like datasheet