CHA5296 27-30GHz High Power Amplifier

United Monolithic Semiconductors

Description

CHA5296 27-30GHz High Power Amplifier GaAs Monolithic Microwave IC .
The CHA5296 is a high gain three-stage monolithic high power amplifier.

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Datasheet Specifications

Part number: CHA5296
Manufacturer: United Monolithic Semiconductors
File Size: 178.58 KB
Datasheet: CHA5296_UnitedMonolithicSemiconductors.pdf
Description: 27-30GHz High Power Amplifier

Features

* Performances : 27-30GHz
* 29dBm output power @ 1dB comp. gain
* 15 dB ± 1dB gain
* DC power consumption, 850mA @ 6V
* Chip size : 3.80 x 2.52 x 0.05 mm Gain & RLosses (dB) 20 15 10 5 0 S22 -5 -10 -15 S11 -20 20 22 24 26 28 30 32 34 36 Frequency (GHz) Typical on jig Measuremen

Applications

* from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process on 50µm substrate thickness, 0.25µm gate length, via holes through the substrate, air bridges and elect

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27-30GHz High Power Amplifier United Monolithic Semiconductors

United Monolithic Semiconductors CHA5296-like datasheet