CHA6005-99F Datasheet, Amplifier, United Monolithic Semiconductors

✔ CHA6005-99F Features

High power : 32.5dBm
High PAE : 38%
Frequency band : 8-12GHz
Linear gain : 22dB
DC bias: Vd=8Volt@Id=350mA
Chip size 3.0x1.5x0.1mm 34 600 32 550 30 500

✔ CHA6005-99F Application

from defense to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm

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Part number:

CHA6005-99F

Manufacturer:

United Monolithic Semiconductors

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235.67 KB

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📄 Datasheet

Description:

High power amplifier. The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associate

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Stock and price

United Monolithic Semiconductors

RF & MW POWER AMPLIFIER

Richardson RFPD

CHA6005-99F

0 In Stock

Qty : 100 units

Unit Price : $59.62

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CHA6005-99F High Power Amplifier United Monolithic Semiconductors