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CHA6005-99F Datasheet - United Monolithic Semiconductors

High Power Amplifier

CHA6005-99F Features

* High power : 32.5dBm

* High PAE : 38%

* Frequency band : 8-12GHz

* Linear gain : 22dB

* DC bias: Vd=8Volt@Id=350mA

* Chip size 3.0x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350

CHA6005-99F General Description

The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from defense to commercial communication systems. The circuit is manufactur.

CHA6005-99F Datasheet (235.67 KB)

Preview of CHA6005-99F PDF

Datasheet Details

Part number:

CHA6005-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

235.67 KB

Description:

High power amplifier.

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CHA6005-99F High Power Amplifier United Monolithic Semiconductors

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