CHA6005-99F High Power Amplifier

United Monolithic Semiconductors

Description

CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC .
The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.

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Datasheet Specifications

Part number: CHA6005-99F
Manufacturer: United Monolithic Semiconductors
File Size: 235.67 KB
Datasheet: CHA6005-99F-UnitedMonolithicSemiconductors.pdf
Description: High Power Amplifier

Features

* High power : 32.5dBm
* High PAE : 38%
* Frequency band : 8-12GHz
* Linear gain : 22dB
* DC bias: Vd=8Volt@Id=350mA
* Chip size 3.0x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350

CHA6005-99F Distributors

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CHA6005-99F High Power Amplifier United Monolithic Semiconductors

United Monolithic Semiconductors CHA6005-99F-like datasheet