Datasheet Details
- Part number
- CHA6005-99F
- Manufacturer
- United Monolithic Semiconductors
- File Size
- 235.67 KB
- Datasheet
- CHA6005-99F-UnitedMonolithicSemiconductors.pdf
- Description
- High Power Amplifier
CHA6005-99F Description
CHA6005-99F Linear Gain (dB) & Pout @ ~ 3dBcomp Idrain @ ~ 3dBcomp (mA) 8-12GHz High Power Amplifier GaAs Monolithic Microwave IC .
The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.
CHA6005-99F Features
* High power : 32.5dBm
* High PAE : 38%
* Frequency band : 8-12GHz
* Linear gain : 22dB
* DC bias: Vd=8Volt@Id=350mA
* Chip size 3.0x1.5x0.1mm
34
600
32
550
30
500
28
450
Linear Gain (dB)
26
Pout @ Pin=14 dBm (3dBcomp)
400
Idrain @ Pin=14 dBm (3dBcomp)
24
350
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