Datasheet4U Logo Datasheet4U.com

CHA6015-99F Datasheet - United Monolithic Semiconductors

2-8GHz High Power Amplifier

CHA6015-99F Features

* Broadband performances: 2-8GHz

* Linear Gain: 18.5dB

* Pout at 3dB compression : 37.5dBm

* PAE at 3dB compression : 29%

* DC bias: Vd=7Volt@Id=2A

* Chip size: 4.68x6.53x0.07mm Main Electrical Characteristics Tamb.= +25°C, Vd = 7V, Id (Quiescent) = 2A, CW Symbol Paramete

CHA6015-99F General Description

The CHA6015-99F is a HPA that provides typically 37.5dBm output power on the frequency band 2-8GHz. The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via .

CHA6015-99F Datasheet (1.05 MB)

Preview of CHA6015-99F PDF

Datasheet Details

Part number:

CHA6015-99F

Manufacturer:

United Monolithic Semiconductors

File Size:

1.05 MB

Description:

2-8ghz high power amplifier.

📁 Related Datasheet

CHA6005-99F High Power Amplifier (United Monolithic Semiconductors)

CHA6005-QEG High Power Amplifier (United Monolithic Semiconductors)

CHA6042 13-16GHz High Power Amplifier (United Monolithic Semiconductors)

CHA6105 8-12GHz Driver Amplifier (United Monolithic Semiconductors)

CHA6105-99F Driver Amplifier (United Monolithic Semiconductors)

CHA611 low noise high accuracy linear Hall effect-based sensor (Cosemitech)

CHA6194-QXG 37-40GHz Power Amplifier (United Monolithic Semiconductors)

CHA6250-QFG 5.5-9GHz Power Amplifier (United Monolithic Semiconductors)

CHA6252-QFG 13-15.5GHz Power Amplifier (United Monolithic Semiconductors)

CHA6356-QXG Power Amplifier (United Monolithic Semiconductors)

TAGS

CHA6015-99F 2-8GHz High Power Amplifier United Monolithic Semiconductors

Image Gallery

CHA6015-99F Datasheet Preview Page 2 CHA6015-99F Datasheet Preview Page 3

CHA6015-99F Distributor