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2SJ211-T1B-A - P-Channel MOSFET

2SJ211-T1B-A Description

2SJ211-T1B-A-VB 2SJ211-T1B-A-VB Datasheet P-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.50 at VGS = - .

2SJ211-T1B-A Features

* Halogen-free According to IEC 61249-2-21 Available
* TrenchFET® Power MOSFET
* Ultra Low On-Resistance

2SJ211-T1B-A Applications

* Active Clamp Circuits in DC/DC Power Supplies Top View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 7

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Datasheet Details

Part number
2SJ211-T1B-A
Manufacturer
VBsemi
File Size
264.30 KB
Datasheet
2SJ211-T1B-A-VBsemi.pdf
Description
P-Channel MOSFET

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