* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package
* PWM Optimized for Fast Switching
* Compliant to RoHS Directive 2002/95/EC APPLICATIONS
* Isolated DC/DC Converters - Primary-Side Switch D GD S Top View G S N-
30N20G
VBsemi
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N-channel 200v mosfet.
30N20G-VB TO263 30N20G-VB TO263 Datasheet N-Channel 200 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.048 at VG.
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