* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Volt
80N10
VBsemi
258.94 KB
N-channel mosfet.
80N10-VB 80N10-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS.
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