| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Diotec Semiconductor AG | DI280N10TL | MOSFET TOLL N 100V 0.002OHM 175C | DigiKey | 1892 | 1000 units |
$1.45
|
🛒 Buy Now |
80N10
VBsemi
258.94 KB
N-channel mosfet.
80N10-VB
80N10-VB Datasheet
N-Channel 100-V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS.
* TrenchFET® Power MOSFET
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Volt
📁 Related Datasheet
80N10 - Power MOSFETs
(IXYS)
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary data sheet
IXFH 80N10 IXFT 80N10
VDSS = 100 V ID25 = 80 .
80N02 - Power MOSFET
(ON Semiconductor)
NTD80N02 Power MOSFET
24 V, 80 A, N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power m.
80N03 - MOSFET
(GFD)
GOFORD
DESCRIPTION
The 80N03 uses advanced trench technology And design to provide excellent RDS (ON ) with Low gate charge . It can be used in a wide.
80N03L - SPB80N03L
(Siemens)
SPP80N03L SIPMOS® Power Transistor
Features • N channel
• Enhancement mode
Product Summary Drain source voltage Drain-Source on-state resistance Cont.
80N055 - NP80N055
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION These produ.
80N06 - N-Channel MOSFET
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
80N06
·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fa.
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Infineon Technologies AG
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