* Trench power MOSFET
* 100 % Rg and UIS tested SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain C
AO4441
VBsemi
250.04 KB
P-channel 60v mosfet.
AO4441-VB AO4441-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per .
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