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AO4447 P-Channel MOSFET

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Description

AO4447 P-Channel Enhancement Mode Field Effect Transistor General .
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Datasheet Specifications

Part number
AO4447
Manufacturer
Alpha & Omega Semiconductors
File Size
515.29 KB
Datasheet
AO4447_AlphaOmegaSemiconductors.pdf
Description
P-Channel MOSFET

Features

* VDS (V) = -30V ID = -15 A (VGS = -10V) Max RDS(ON) < 7.5mΩ (VGS = -10V) Max RDS(ON) < 12mΩ (VGS = -4V) ESD Rating: 4KV HBM The AO4447 uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch. The device is ESD protected. S

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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