* TrenchFET® power MOSFET
* Package with low thermal resistance
* 100 % Rg and UIS tested D G G DS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur
CEB63A3
VBsemi
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N-channel 30v mosfet.
CEB63A3-VB CEB63A3-VB Datasheet N-Channel 30 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at V.
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