VSM120N04-T1 - These N-Channel enhancement mode power field effect transistors
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode.
The
VSM120N04-T1 Features
* 40V,120A,RDS(on).max=3.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed
* Green device available TO-252 TO-251 D Applications
* Motor Drives
* UPS
* DC-DC Converter Absolute Maximum Ratings TC = 25°C unless otherwise noted Parame
