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VSM120N04-T1, VSM120N04-SS Datasheet - VSEEI

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VSM120N04-T1, VSM120N04-SS These N-Channel enhancement mode power field effect transistors

VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

VSM120N04-SS-VSEEI.pdf

This datasheet PDF includes multiple part numbers: VSM120N04-T1, VSM120N04-SS. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

VSM120N04-T1, VSM120N04-SS

Manufacturer:

VSEEI

File Size:

1.32 MB

Description:

These N-Channel enhancement mode power field effect transistors

Note:

This datasheet PDF includes multiple part numbers: VSM120N04-T1, VSM120N04-SS.
Please refer to the document for exact specifications by model.

Features

* 40V,120A,RDS(on). max=3.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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