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VSM120N04-T1 Datasheet - VSEEI

These N-Channel enhancement mode power field effect transistors

VSM120N04-T1 Features

* 40V,120A,RDS(on).max=3.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green device available TO-252 TO-251 D Applications

* Motor Drives

* UPS

* DC-DC Converter Absolute Maximum Ratings TC = 25°C unless otherwise noted Parame

VSM120N04-T1 General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode. The.

VSM120N04-T1 Datasheet (1.32 MB)

Preview of VSM120N04-T1 PDF

Datasheet Details

Part number:

VSM120N04-T1

Manufacturer:

VSEEI

File Size:

1.32 MB

Description:

These n-channel enhancement mode power field effect transistors.

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VSM120N04-T1 These N-Channel enhancement mode power field effect transistors VSEEI

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