VSM120N04-T2, VSM120N04-SS These N-Channel enhancement mode power field effect transistors

Description

VSM120N04-SS Shenzhen VSEEI Semiconductor Co., Ltd .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

📥 Download Datasheet

VSM120N04-T2 Datasheet Preview — This datasheet PDF includes multiple part numbers: VSM120N04-T2, VSM120N04-SS. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: VSM120N04-T2, VSM120N04-SS
Manufacturer: VSEEI
File Size: 1.32 MB
Datasheet: VSM120N04-SS-VSEEI.pdf
Description: These N-Channel enhancement mode power field effect transistors
Note: This datasheet PDF includes multiple part numbers: VSM120N04-T2, VSM120N04-SS.
Please refer to the document for exact specifications by model.

Features

* 40V,120A,RDS(on). max=3.5mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

VSM120N04-T2 Distributors

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VSM120N04-SS These N-Channel enhancement mode power field effect transistors VSEEI

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