Datasheet4U Logo Datasheet4U.com

VSM120N04-T2, VSM120N04-SS Datasheet - VSEEI

VSM120N04-T2 - These N-Channel enhancement mode power field effect transistors

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high energy pulse in the avalanche and commutation mode.

The

VSM120N04-T2 Features

* 40V,120A,RDS(on).max=3.5mΩ@VGS = 10V

* Improved dv/dt capability

* Fast switching

* 100% EAS Guaranteed

* Green device available TO-252 TO-251 D Applications

* Motor Drives

* UPS

* DC-DC Converter Absolute Maximum Ratings TC = 25°C unless otherwise noted Parame

VSM120N04-SS-VSEEI.pdf

This datasheet PDF includes multiple part numbers: VSM120N04-T2, VSM120N04-SS. Please refer to the document for exact specifications by model.
VSM120N04-T2 Datasheet Preview Page 2 VSM120N04-T2 Datasheet Preview Page 3

Datasheet Details

Part number:

VSM120N04-T2, VSM120N04-SS

Manufacturer:

VSEEI

File Size:

1.32 MB

Description:

These n-channel enhancement mode power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: VSM120N04-T2, VSM120N04-SS.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags