VS30P39AE Datasheet, Mosfet, Vanguard Semiconductor

VS30P39AE Features

  • Mosfet
  • Low On-Resistance
  • Fast Switching
  • 100% Avalanche Tested
  • Repetitive Avalanche Allowed up to Tjmax
  • Lead-Free, RoHS Compliant Description VS30P3

PDF File Details

Part number:

VS30P39AE

Manufacturer:

Vanguard Semiconductor

File Size:

476.60kb

Download:

📄 Datasheet

Description:

P-channel advanced power mosfet. VS30P39AE designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are

Datasheet Preview: VS30P39AE 📥 Download PDF (476.60kb)
Page 2 of VS30P39AE Page 3 of VS30P39AE

VS30P39AE Application

  • Applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings

TAGS

VS30P39AE
P-Channel
Advanced
Power
MOSFET
Vanguard Semiconductor

📁 Related Datasheet

VS30P39AP - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VS30P39AP -30V/-39A P-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed.

VS30P60AD - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VS30P60AI VS30P60AD -30V/-60A P-Channel Advanced Power MOSFET Features Low On-Resistance,5V Logic Level Control Fast Switching 100% Avalanche Test.

VS30P60AI - P-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VS30P60AI VS30P60AD -30V/-60A P-Channel Advanced Power MOSFET Features Low On-Resistance,5V Logic Level Control Fast Switching 100% Avalanche Test.

VS3009DS - 30V/8A Dual N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features 30V/8A Ron(typ.)=16 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Gree.

VS30150AD - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche test  P.

VS3019AD - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features Ron(typ.)=25 mΩ @VGS=10V Ron(typ.)=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Complia.

VS3038AO - N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features 30V/8A Ron(typ.)=15 mΩ @VGS=10V Ron(typ.)=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Gree.

VS3060AD - 30V/60A N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VS3060AD 30V/60A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦100% Avalanche Tested ♦Repetitive Avalanche Allowed up .

VS3060AS - 30V/20A N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
VS3060AS 30V/20A N-Channel Advanced Power MOSFET Features ♦Low On-Resistance ♦Fast Switching ♦ Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, R.

VS3072AD - 30V/72A N-Channel Advanced Power MOSFET (Vanguard Semiconductor)
Features  N-Channel  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS pliant VS3072.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts