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VS4435AS P-Channel Advanced Power MOSFET

VS4435AS Description

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Description VS4435AS designed by the trench processing techniques to achieve extremely low on-resistance.

VS4435AS Applications

* Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink TA =25°C I

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Datasheet Details

Part number
VS4435AS
Manufacturer
Vanguard Semiconductor
File Size
308.52 KB
Datasheet
VS4435AS-VanguardSemiconductor.pdf
Description
P-Channel Advanced Power MOSFET

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P-Channel Advanced Power MOSFET Vanguard Semiconductor
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