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SI1012CR N-Channel MOSFET

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Description

N-Channel 20 V (D-S) MOSFET Si1012CR Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.396 at VGS = 4.5 V 0.456 at VGS = 2.5 V 20 0.546 at .

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Features

* TrenchFET® Power MOSFET: 1.2 V Rated
* 100 % Rg Tested
* Gate-Source ESD Protected: 1000 V

Applications

* Load/Power Switching for Portable Devices
* Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
* Battery Operated Systems
* Power Supply Converter Circuits Marking Code: K ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol

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