* D D D D D D High-Side Switching Low On-Resistance: 0.7 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 10 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation
SI1012R
Vishay ↗ Siliconix
167.68 KB
N-channel mosfet.
Si1012R/X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.2.
📁 Related Datasheet
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(MCC)
MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
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SI1012 - Ultra Low Power ADC
(Silicon Laboratories)
Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.
SI1012CR - N-Channel MOSFET
(Vishay Siliconix)
N-Channel 20 V (D-S) MOSFET
Si1012CR
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.396 at VGS = 4.5 V
0.456 at VGS = 2.5 V 20
0.546 at .
Si1012X - N-Channel MOSFET
(Vishay Siliconix)
Si1012R/X
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.70 @ VGS = 4.5 V 20 0.85 @ VGS = 2.5 V 1.2.
SI1010 - Ultra Low Power 10-Bit ADC
(Silicon Laboratories)
Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.
SI1011 - Ultra Low Power ADC
(Silicon Laboratories)
Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.
SI1013 - Ultra Low Power ADC
(Silicon Laboratories)
Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operati.
SI1013CX - MOSFET
(Vishay)
.vishay.
Si1013CX
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.760 at VGS = -4.5 V
-20 1.040 at VGS.
