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SI1029X MOSFET

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Description

Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () N-Channel 1.40 at VGS = 10 V 60 3 a.

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Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs
* Very Small Footprint
* High-Side Switching
* Low On-Resistance: N-Channel, 1.40  P-Channel, 4 
* Low Threshold: ± 2 V (typ. )
* Fast Switching Speed: 15 ns (typ

Applications

* Replace Digital Transistor, Level-Shifter
* Battery Operated Systems
* Power Supply Converter Circuits ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 60 -

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