Click to expand full text
Si2305DS
Vishay Siliconix
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
–8 8
rDS(on) (W)
0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V
ID (A)
"3.5 "3 "2
TO-236 (SOT-23)
G 1 3 S 2 D
Top View Si2305DS (A5)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–8 "8 "3.5 "2.8 "12 –1.6 1.25 0.
SI2305DS Datasheet
