SI2338DS

N-Channel MOSFET

Vishay Siliconix

* PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.028 at VGS = 10 V 0.033 at VGS = 4.5 V SOT-23 ID (A)a, e 6 Qg (Typ.) 4.2 nC 6

* Halogen-free According to IEC 61249-2-21 Definition

* TrenchFET® Power MOSFET

* Low On-Resistance

* 100 % Rg Tested

* Compliant to RoHS

SI2338DS

307.92 KB

N-channel mosfet.

📁 Related Datasheet

SI2331DS P-Channel MOSFET (Vishay Siliconix)

SI2333 P-ChannelEnhancement Mode Power MOSFET (PUOLOP)

SI2333 P-Channel Enhancement Mode Field Effect Transistor (MCC)

SI2333CDS P-Channel MOSFET (Vishay Siliconix)

SI2333CDS-T1-GE3 P-Channel MOSFET (VBsemi)

SI2333DS P-Channel MOSFET (Vishay Siliconix)

SI2335DS P-Channel 12-V (D-S) MOSFET (Vishay Siliconix)

SI2336DS N-Channel MOSFET (Vishay Siliconix)

SI2337DS P-Channel MOSFET (Vishay Siliconix)

SI2300 N-Channel MOSFET (Kexin)

TAGS

SI2338DS N-Channel MOSFET Vishay Siliconix

Image Gallery