Advanced Trench Process Technology High Density Cell Design for Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol Ratings Units
Drain-Source Voltage
VDS 20 V
Gate-Source Voltage
VGS 8 V
Drain Current (Continuous) Drain Current (Pulsed) 1 Total Power Dissipation @TA=25 oC
ID 6
A
IDM 18
A
PD 1.25 W
Maximum Diode Forward Current
IS 1.6 A
Operating Junction and Storage Temperature Rang.
