* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested
* Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free) Si4966DY-T1-GE3 (
SI4966DY Datasheet (174.61 KB)
SI4966DY
Vishay ↗ Siliconix
174.61 KB
Dual n-channel mosfet.
Si4966DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.025 at VGS = 4.5 V 0.035 at VGS = 2.5 V
ID (.
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